In a lightly doped p-n junction under reverse biased condition, the breakdown mechanism is called
Space charge region around a p-n junction
When the temperature of a doped semiconductor is increased, its conductivity
Which statement is/are correct for formation of PN junction ?
Depletion layer is created due to ?
In depletion region mobile charge carriers are ?
Depletion layer opposes which carriers from crossing the Junction ?
What is the relationship between width of depletion layer and doping of semiconductor?
With the increase of reverse bias voltage in a P-N diode the reverse current
In PN junction, Electric field intensity at the junction is ?
In P –type semiconductor Fermi level will exist at room temperature.
In N-type semiconductor at room temperature Fermi level will exist:-
The depletion layer across a P+-n junction lies.
A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statements is true?
Direct Band gap semi-conductors
