Q1:

Assertion (A): Op-amp with FET input stages have less gain than those BJT.

Reason(R): BJT has higher trans conductance than FET.

Q2:

Consider the following devices.

1. BJT in CB mode

2. BJT in CE mode

3.JFET

4.MOSFET

The correct sequence of these devices in increasing order of their input impedance is:

Q3:

In the circuit show below, for the MOS transistor ${\mu }_n{C}_{ox}=100\mu A/V^2$and the threshold Voltage $V_T=1V.$The Voltage V_X at the source of the upper transistor is

Q4:

The Gain of a MOSFET Amplifier drops at very low frequencies due to -

Q5:

The current gain of a bipolar transistor drops at high frequency because of

Q6:

A Si transistor with $V_{BE(SAT)}=0.8V,\beta =100,V_{CE(SAT)}=0.2V$is used as shown in the below figure. Then the minimum value of $R_C(inK\Omega )$ for which transistor remains in the saturation region

Q7:

Determine the DC current ‘Ic’ for the circuit shown below. Assuming $V_{BE}=0.7V$$\beta =75$

Q8:

The circuit using a BJT with $\beta =50$and $V_{BE}=0.7V$is shown in the figure. The base current $I_B$and collector voltage V_C are respectively

Q9:

The transistor switch as shown in figure has $\beta$=120,$V_{CE}$=0.2V. $R_c$=1.2k$\Omega$ and $V_{cc}$=5V

The output voltage when transistor switch is closed and the minimum base current needed to close the switch, are respectively.

Q10:

Assertion (A): A fixed bias BJT circuit exhibits better performance as compared to a self bias BJT circuit.

Reason (R): A fixed bias BJT circuit uses less components as compared to a self bias BJT circuit.

Q11:

A BJT is said to be operating in the saturation region if:

Q12:

Why n-p-n transistors are preferred over p-n-p transistor?

Q13:

Biasing is used in transistor amplifiers to

1. Stabilize the operating point against temperature variation.

2. Place the operating point in the linear region of the characteristics.

3. Make $\alpha$,$\beta$and I_CO of the transistor independent of temperature variation.

4. Reduce distortion and increases dynamic range.

Q14:

The current gain of a bipolar transistor drops at high frequency because of:

Q15:

The phenomenon known as ‘early effect’ in a bipolar transistor refers to a reduction of the effective base which is caused by